1993. 11. 3 1/3 semiconductor technical data KTC2347 epitaxial planar npn transistor revision no : 0 high frequency application. tv uhf oscillator application. tv vhf mixer application. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 3 v collector current i c 50 ma emitter current i e -50 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =15v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 - - 1.0 a collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 15 - - v dc current gain h fe v ce =3v, i c =8ma 20 - - transition frequency f t v ce =10v, i c =8ma 650 1100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 1.2 1.5 pf collector-base time constant c c rbb? v cb =10v, i c =8ma, f=30mhz - - 12 ps
1993. 11. 3 2/3 KTC2347 revision no : 0 rb reverse transfer susceptance 0 -4 input susceptance b (ms) -4 ie 0 input conductance g (ms) ie ie y - f reverse transfer susceptance -3 re -0.8 reverse transfer conductance g (ms) re re y - f -0.8 reverse transfer conductance g (ms) rb rb y - f f - i c collector current i (ma) 0.3 0.5 1 3 100 t transition frequency f (mhz) t c 510 30 300 500 1k 3k common emitter v =10v ta=25 c ce input conductance gib (ms) 0 -100 input susceptance b (ms) ib y - f fb fb forward transfer conductance g (ms) -100 forward transfer susceptance 0 fb y - f 20 40 60 80 100 120 -80 -60 -40 -20 0 + + + + + + + + + 900 800 700 600 500 400 300 200 i =-2ma e -4 -6 f=100mhz common base v =10v ta=25 c cb ib -0.6 -0.4 -0.2 0 -3 -2 -1 + + + + + + + + + common base v =10v ta=25 c cb f=100mhz 200 300 400 500 600 700 800 900 -6 -4 i =-2ma e -80 -60 -40 -20 0 20 20 40 60 80 100 + + + + + + + + + f=100mhz 200 300 400 500 600 700 800 900 -6 -4 i =-2ma e common base v =10v ta=25 c cb 4 8 12 16 20 24 0 4 8 12 + + + + + + + + + common emitter v =10v ta=25 c ce f=100m hz 200 300 400 500 600 700 800 900 i =-2ma e -4 -6 -0.6 -0.4 -0.2 0 -2 -1 0 + + + + + + + + + common emitter v =10v ta=25 c ce f=100mhz 200 300 400 500 600 700 800 900 i =-2ma e -6 -4 b (ms) b (ms) b (ms)
1993. 11. 3 3/3 KTC2347 revision no : 0 y - f fe fe forward transfer conductance g (ms) -20 -100 forward transfer susceptance 0 b (ms) fe oe b (b ) (ms) 0 output susceptance 0 output conductance g (g ) (ms) oe ob y - f 020406080100 -80 -60 -40 -20 + + + + + + + + + common emitter v =10v ta=25 c ce 900 800 700 600 500 400 300 200 f=100mhz i =-2ma e -4 -6 y - f oe ( ) ob ob 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 6 7 + + + + + + + + + common emitter (common base) v =10v(v =10v) ce cb ta=25 c 900 800 700 600 500 400 300 200 f=100mhz -4 -6 i =-2ma e
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